BM6GD11BFJ-LB中文资料Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT数据手册ROHM规格书

描述 Description

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.

特性 Features

• Built-in Galvanic Isolation
• Under-voltage Lockout Function