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型号	下载订购	功能描述	制造商上传企业	LOGO
BLV40N20	文件：300 bytes Page：1 Pages	N-channel Enhancement Mode Power MOSFETN-channel Enhancement Mode Power MOSFET	Belling 上海贝岭	Belling
BR40N20	文件：1.28611 Mbytes Page：9 Pages	N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：1.28611 Mbytes 页数：9 Pages	FOSHAN 蓝箭电子	FOSHAN
CED40N20	文件：531.53 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant 文件：531.53 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEU40N20	文件：531.53 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant 文件：531.53 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多BLV40N20供应商更新时间2026-3-16 14:03:00