UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resist

文件：108.63 Kbytes 页数：14 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting resistors for an

文件：91.31 Kbytes 页数：11 Pages

PHI

PHI

UHF power transistor

恩XP

UHF power transistor

恩XP