P-Channel Enhancement Mode Power MOSFET

Belling

上海贝岭

P-Channel Enhancement Mode MOSFET

文件：118.48 Kbytes 页数：8 Pages

bookly

百力微电子

Silicon Monolithic intregrated circuit

文件：173.29 Kbytes 页数：4 Pages

ROHM

罗姆

P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：496.2 Kbytes 页数：5 Pages

CET

华瑞