沟槽栅金属氧化物半导体场效应管(Trench MOSFETs)

BLM30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • High power and current handing capability\n• 100% avalanche tested\n• RoHS product;

Belling

上海贝岭

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.35 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.35 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Power MOSFET 30 Amps, 200 Volts

N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail

文件：88.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体