沟槽栅金属氧化物半导体场效应管

The BLM08N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.\n\n • High density cell design for ultra low Rdson\n• Fully characterized Avalanche voltage and current\n;

Belling

上海贝岭

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：231.88 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

文件：121.9 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

文件：121.9 Kbytes 页数：8 Pages

Infineon

英飞凌