沟槽栅金属氧化物半导体场效应管

\n The BLM08N06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current;

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上海贝岭

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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杰力科技

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 8mΩ ID 60A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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杰力科技