Power LDMOS transistor

General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent

文件：919.58 Kbytes 页数：11 Pages

Ampleon

安谱隆

Power LDMOS transistor

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Easy power control\nIntegrated dual side ESD protection\nHigh flexibility with respect to pulse formats\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (0.5 GHz to 1.4 GHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Su;

Ampleon

安谱隆

Power LDMOS transistor

文件：140.79 Kbytes 页数：11 Pages

PHI

飞利浦

Package：SOT-467C；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 100V 21DB SOT467C

Ampleon

安谱隆