BLL8H0514-25分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLL8H0514-25属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLL8H0514-25晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Features and benefits

 Easy power control

 Integrated dual side ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (0.5 GHz to 1.4 GHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range