BLH3356B

BLH3356B

文件：90.82 Kbytes 页数：2 Pages

Belling

上海贝岭

MOSFET

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Belling

上海贝岭

6P 22 7/30 TC FLEX OAS PVDF TYPE CL2P

文件：74.37 Kbytes 页数：1 Pages

GENERAL

通用电缆

General-Purpose Switching Device Applications

Features • 1.8V drive • Halogen free compliance • Protection diode in

文件：400.34 Kbytes 页数：4 Pages

SANYO

三洋

Single P-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements Features • Low On-Resistance • 1.8V dr

文件：499.67 Kbytes 页数：5 Pages

ONSEMI

安森美半导体