Power LDMOS transistor

General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz. Features and benefits ■ Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical) ■ High efficiency ■ Low thermal resistance

文件：323.44 Kbytes 页数：20 Pages

恩XP

Power LDMOS transistor

文件：268.3 Kbytes 页数：17 Pages

PHI

飞利浦

Power LDMOS transistor

400 W LDMOS power transistor with improved video bandwidth for base stationapplications at frequencies from 1805 MHz to 1995 MHz. Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)\nHigh efficiency\nLow Rth providing excellent thermal stability\nDesigned for broadband operation\nLower output capacitance for improved performance in Doherty applications\nDesigned for low memory effects providing excellen;

Ampleon

安谱隆

Package：SOT-1242B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19DB SOT1242B

Ampleon

安谱隆

Package：SOT-1242B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19DB SOT1242B

Ampleon

安谱隆