General description

400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Features and benefits

■ Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)

■ High efficiency

■ Low thermal resistance providing excellent thermal stability

■ Designed for broadband operation

■ Lower output capacitance for improved performance in Doherty applications

■ Designed for low memory effects providing excellent pre-distortability

■ Internally matched for ease of use

■ Integrated ESD protection

■ Design optimized for gull-wing

■ Excellent ruggedness

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to

1995 MHz frequency range

BLF8G20LS-400PV属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的BLF8G20LS-400PV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。