RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz. Excellent ruggedness\nHigh efficiency\nLow Rth providing excellent thermal stability\nDesigned for broadband operation (1427 MHz to 2170 MHz)\nLower output capacitance for improved performance in Doherty applications\nDesigned for low memory effects providing excellent pre-distortability\nInternally;

Ampleon

安谱隆

Package：SOT-1121B；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19.5DB SOT1121B

Ampleon USA Inc.

Package：SOT-1121B；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19.5DB SOT1121B

Ampleon USA Inc.