RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19DB SOT502B

Ampleon USA Inc.

UHF power LDMOS transistor

General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: ◆ Output power = 29.5 W (AV) ◆ Gain

文件：51.54 Kbytes 页数：9 Pages

PHI

PHI

高频管

恩XP

上传：深圳市赛芯源科技有限公司

SMD16

AMPLEON

安谱隆

上传：深圳市长旗科技有限公司