Power LDMOS transistor

140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Excellent ruggedness\nHigh efficiency\nLow Rth providing excellent thermal stability\nDesigned for broadband operation (2000 MHz to 2200 MHz)\nLower output capacitance for improved performance in Doherty applications\nDesigned for low memory effects providing excellent digital pre-distortion capabil;

Ampleon

安谱隆

Power LDMOS transistor

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PHI

PHI

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT502B

Ampleon USA Inc.

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT502B

Ampleon USA Inc.