Power LDMOS transistor

General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 360 mA: ◆ Average output power = 2.5 W

文件：83.66 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

恩XP

Package：SOT-608A；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.8DB SOT608A

Ampleon USA Inc.