Power LDMOS transistor

General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 32 W

文件：162.86 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description\n160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA:\n  Average output power = 32 W\n  Power gain = 22.5 dB\n  Efficiency = 27 %\n  ACPR = −41 dBc\nEasy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh eff;

恩XP

RF FET LDMOS 65V 22.5DB SOT502B

Ampleon

安谱隆

Package：SOT-502B；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 22.5DB SOT502B

Ampleon USA Inc.

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 22.5DB SOT502B

Ampleon USA Inc.