Broadband power LDMOS transistor

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PHI

PHI

Broadband power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Integrated ESD protection\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Broadband power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Integrated ESD protection\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Package：SOT-1121A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18DB SOT1121A

Ampleon USA Inc.

Package：SOT-1121B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT1121B

Ampleon USA Inc.

Package：SOT-1121B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT1121B

Ampleon USA Inc.