RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband power LDMOS transistor

General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Features a

文件：1.02305 Mbytes 页数：14 Pages

Ampleon

安谱隆

Broadband power LDMOS transistor

文件：188.04 Kbytes 页数：14 Pages

PHI

飞利浦

Broadband power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Integrated ESD protection\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Package：SOT-1121B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT1121B

Ampleon USA Inc.

Package：SOT-1121B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 17DB SOT1121B

Ampleon USA Inc.