Broadband power LDMOS transistor

文件：173.12 Kbytes 页数：13 Pages

PHI

飞利浦

Broadband power LDMOS transistor

General description\nA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. ■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:\n   ♦ Average output power = 100 W\n   ♦ Power gain = 18 dB\n   ♦ Drain efficiency = 56 %\n■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quies;

恩XP

GLASS PASSIVATED JUNCTION GENERAL PURPOSE DIODE

文件：73.86 Kbytes 页数：2 Pages

Central

高频管

恩XP

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SMD16

Ampleon

安谱隆

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