Broadband power LDMOS transistor

General description\nA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. ■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:\n   ♦ Average output power = 100 W\n   ♦ Power gain = 18 dB\n   ♦ Drain efficiency = 56 %\n■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quies;

恩XP

LED - Chip

LED - Chip

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EPIGAP

高频管

恩XP

上传：深圳市赛芯源科技有限公司

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Ampleon

安谱隆

上传：深圳市长旗科技有限公司

TRAY

佰鸿

上传：深圳特瑞杰电子有限公司