BLF2425M9LS30数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications atfrequencies from 2400 MHz to 2500 MHz.

The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applicationsand are assembled in a high performance ceramic package.

特性 Features

High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

Industrial, scientific and medical applications in the frequency range from 2400MHz to 2500 MHz

简介

BLF2425M9LS30属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF2425M9LS30晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。