Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ Designed

文件：227.68 Kbytes 页数：15 Pages

恩XP

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

文件：1.12064 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

文件：965.61 Kbytes 页数：13 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

文件：1.12064 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ Designed

文件：227.68 Kbytes 页数：15 Pages

恩XP

Power LDMOS transistor

文件：227.68 Kbytes 页数：15 Pages

PHI

PHI

Power LDMOS transistor

文件：181.12 Kbytes 页数：13 Pages

PHI

PHI

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. • Easy power control\n• Integrated ESD protection\n• Excellent ruggedness\n• High efficiency\n• Excellent thermal stability\n• Designed for broadband operation (HF to 600 MHz)\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS);

Ampleon

安谱隆

Power LDMOS transistor

恩XP

Power LDMOS transistor

恩XP