BLF183XR数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

特性 Features

• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 600 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Industrial, scientific and medical applications
• Broadcast transmitter applications

简介

BLF183XR属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF183XR晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。