BLF178P

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BLF178P

Power LDMOS transistor

Generaldescription A1200WLDMOSpowertransistorforbroadcastapplicationsandindustrialapplications intheHFto110MHzband. Featuresandbenefits Typicalpulsedperformanceatfrequencyof108MHz,asupplyvoltageof50Vandan IDqof40mA,atpof100μswithδof20: Outp

BLF178P

Power LDMOS transistor; Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (10 MHz to 108 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances\n;

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.\n\n

BLF178P

Power LDMOS transistor;

恩XP

BLF178P_15

Power LDMOS transistor

PHI

BLF178P,112

Package：SOT-539A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 28.5DB SOT539A