BLF1049数据手册恩XP中文资料规格书

描述 Description

DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.FEATURES
• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ = 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 = −64 dBc at 400 kHz
(EDGE; IDQ = 750 mA)
– EVM = 2% rms (AV)
(EDGE; IDQ = 750 mA)
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.APPLICATIONS
• RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.

特性 Features

• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ = 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 = −64 dBc at 400 kHz
(EDGE; IDQ = 750 mA)
– EVM = 2% rms (AV)
(EDGE; IDQ = 750 mA)
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.