碳化硅金属氧化物半导体场效应管（SIC MOSFETs）

BLC16N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation fr • Revolutionary semiconductor material - Silicon Carbide\n• Fast intrinsic diode with low reverse recovery\n• 100% avalanche tested\n• RoHS product\n;

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上海贝岭

Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Recovery Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Hig

文件：124.22 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：150.41 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Recovery Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Hig

文件：124.22 Kbytes 页数：4 Pages

IXYS

艾赛斯