丝印：BLA；Package：5LdSC-70；Single, Dual, and Quad Micropower, Low Drift, RRIO Operational Amplifiers

文件：1.22664 Mbytes 页数：19 Pages

RENESAS

瑞萨

丝印：BLA；Package：5LdSC-70；Single, Dual, and Quad Micropower, Low Drift, RRIO Operational Amplifiers

文件：1.22664 Mbytes 页数：19 Pages

RENESAS

瑞萨

丝印：BLAA；Package：SOT-23；Low Power 430MHz HFM Oscillator with Disable

Features • Small SOT-23 and MSOP8 packages • Frequency to 430MHz min • Amplitude to 25mAP-P min • Output tristate function (MSOP8) • Power-down function (MSOP8) • Single +3.5V to +5.0V supply • Simple to use - only two external resistors required • Independent resistor setting for frequenc

文件：641.42 Kbytes 页数：10 Pages

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瑞萨

丝印：BLAA；Package：SOT-23；Low Power 430MHz HFM Oscillator with Disable

Features • Small SOT-23 and MSOP8 packages • Frequency to 430MHz min • Amplitude to 25mAP-P min • Output tristate function (MSOP8) • Power-down function (MSOP8) • Single +3.5V to +5.0V supply • Simple to use - only two external resistors required • Independent resistor setting for frequenc

文件：641.42 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：BLAYW；Package：TSOT25；1A STEP-DOWN DC-DC CONVERTER

文件：572.25 Kbytes 页数：17 Pages

DIODES

美台半导体

丝印：BLAYW；Package：DFN；1A STEP-DOWN DC-DC CONVERTER

文件：572.25 Kbytes 页数：17 Pages

DIODES

美台半导体

Photoelectric Sensors

BLA 32D-002-S4 Basic features Approval/Conformity CE WEEE cULus UKCA Basic standard IEC 60947-5-2 Principle of operation Light array Scope of delivery Holding system Connection cable (emitter - receiver) Manual Series D Style Square Straight connection

文件：455.29 Kbytes 页数：5 Pages

BALLUFF

巴鲁夫

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Avionics LDMOS transistor

General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Features ■ High power gain ■ Easy power control ■ Excellent ruggedness ■ Source on mounti

文件：77.23 Kbytes 页数：12 Pages

PHI

PHI

Avionics LDMOS power transistor

General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Features and benefits ■ High power gain ■ Easy power control ■ Excellent ruggedness ■ Source on m

文件：141.61 Kbytes 页数：13 Pages

恩XP