BL6N70D规格书批发采购银河微电Galaxy-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BL6N70D	文件：300 bytes Page：1 Pages	700V, N Channel, HV Planar MOSFETs	Galaxy 银河微电	Galaxy
FQAF6N70	文件：745.64 Kbytes Page：8 Pages	700V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 4.74A, 700V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 15 pF) • Fast switching • 文件：745.64 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQP6N70	文件：763.25 Kbytes Page：8 Pages	700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan 文件：763.25 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQPF6N70	文件：560.31 Kbytes Page：8 Pages	700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h 文件：560.31 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多BL6N70D供应商更新时间2026-10-24 12:00:00