3N150,HV,高压

BL3N150, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product ;

Belling

上海贝岭

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes 页数：1 Pages

THINKISEMI

思祁半导体

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes 页数：1 Pages

THINKISEMI

思祁半导体

Power switch circuit of adaptor and charger.

文件：364.03 Kbytes 页数：6 Pages

HMSEMI

华之美半导体