BL090N06B规格书行情报价银河微电Galaxy-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BL090N06B	文件：300 bytes Page：1 Pages	73A, 60V, 157W, N Channel, Power MOSFETs	Galaxy 银河微电	Galaxy
GT090N06K	文件：692.97 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：692.97 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
GT090N06MH	文件：1.07666 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.07666 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
HGB090N06SL	文件：805.9 Kbytes Page：6 Pages	60V N-Ch Power MOSFET Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and 文件：805.9 Kbytes 页数：6 Pages	HUNTECK 恒泰柯半导体	HUNTECK

更多BL090N06B供应商更新时间2025-11-15 12:00:00