丝印：BL；Package：SOT1061；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qual

文件：250.88 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BL；Package：HUSON3；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74382 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BL；Package：SOT1061；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified acc

文件：250.07 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BL；Package：SC-62；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74382 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BL；Package：SOT89；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

文件：230.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BL；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

文件：1.18577 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BL；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

文件：531.72 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：BL；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

文件：6.13709 Mbytes 页数：5 Pages

NIUHANG

纽航电子

丝印：BL；Package：SOT-89；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

文件：191.98 Kbytes 页数：5 Pages

BILIN

银河微电

丝印：BL；Package：SC-62；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

文件：239.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司