LM3139

P-Channel1.8-V(G-S)MOSFET

MS3139

MilitaryStandardConnectorIndex

ThefollowingisalistingofcircularconnectorsdefinedbyUSMilitarySpecifications,cross-referencedtotheapplicableactiveorinactivepartnumberseries.ThesymbolsintheConnectorDesignatorcolumnareanessentialelementinGlenair’sbackshellpartnumberdevelopments.

NTE3139

LightEmittingDiode−1.8mm

Features: •AllPlasticMoldTypew/WaterClearLens: NTE3133(SuperYellow−Green,AllGaP/GaAs) NTE3135(Orange,AllnGaPl/GaAs) NTE3136(SuperOrange,AllnGaP/GaAs) NTE3138(SuperRed,GaAIAs/GaAIAs) NTE3139(SuperBlue,GaAIAs/GaAIAs)

NTK3139P

PowerMOSFET??0V,??80mA,SingleP?묬hannelwithESDProtection,SOT??23

PowerMOSFET−20V,−780mA,SingleP−ChannelwithESDProtection,SOT−723 Features •P−channelSwitchwithLowRDS(on) •44SmallerFootprintand38ThinnerthanSC−89 •LowThresholdLevelsAllowing1.5VRDS(on)Rating •OperatedatLowLogicLevelGateDrive •TheseDevicesarePb−Free,

PE3139

CABLEASSEMBLYRG316/USSMBPLUGTOSSMBPLUG

PE3139LF

cableassembly,rg316/u,ssmbplugtossmbplug(leadfree)

PST3139

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3139

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

RM3139K

P-ChannelMOSFET

FEATURE LeadFreeProductisAcquired SurfaceMountPackage P-ChannelSwitchwithLowRDS(on) OperatedatLowLogicLevelGateDrive

SCG3139K

-0.66A,-20V,RDS(O)520m
(ohm)PChannelEnhancementMOSFET