BL-R2331T

GaP/GaP Green Low power consumption.

BL-R2331T

STANDARD LED LAMPS(RECTANGULAR TYPES)

BPT-BP2331

SILICONPHOTOTRANSISTOR

APPLICATIONS ●RemoteControl,●PhotoDetector,●SmokeDetector,●AutomaticControlSystem●OpticalEncoder ABSOLUTEMAXIMUMRATINGS(Ta=25) ●Collector-to-EmitterSaturationVoltageVce(SAT).(Ib=100uA)/Ic=2mA.........0.4V(Max.) ●Emitter-to-collectorBreakdownVoltage(BVeco)......

BPT-BP2331

LED

C2331

SiliconPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SA1008 •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Switchingregulators •DC/DCconverters •Highfrequencypoweramplifiers

C2331Y

NPNLOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING)

LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING •ComplementtoKSA931 •HighCollector-BaseVoltageVcso=80V •CollectorCurrentIc=700mA •CollectorDisslpationPc=1W

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEH2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.