C2331

Silicon Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SA1008 •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Switchingregulators •DC/DCconverters •Highfrequencypoweramplifiers

C2331Y

NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)

LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING •ComplementtoKSA931 •HighCollector-BaseVoltageVcso=80V •CollectorCurrentIc=700mA •CollectorDisslpationPc=1W

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEH2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2331

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V.

CES2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CHM2331PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.2Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.