Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)

文件：74.77 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)

文件：174.29 Kbytes 页数：13 Pages

RENESAS

瑞萨

Bias Controlled Monolithic IC VHF/UHF RF Amplifier

•  Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);\n    To reduce using parts cost & PC board space.\n•  High |yfs| ;\n    |yfs| = 29 mS typ. ( f = 1kHz)\n•  Low noise;\n    NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)\n•  Withstanding to ESD;\n    B;

HITACHI

日立

GaAlAs Semiconductor Laser

文件：40.25 Kbytes 页数：2 Pages

PANASONIC

松下

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件：256.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Divide by: 64/65/72 triple modulus low power ECL prescaler

DESCRIPTION The SA702 triple modulus (Divide By 64/65/72) low power ECL prescaler is used in synthesizer systems to achieve low phase lock time, broad operating range, high reference frequency and small frequency step sizes. The minimum supply voltage is 2.7V and is compatible with the CMOS UMA10

文件：80.77 Kbytes 页数：7 Pages

PHI

PHI