Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in

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Transistors>Amplifiers/MOSFETs

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Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in

文件：173.92 Kbytes 页数：13 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ​​​​​​​● TO-220 & TO-263 package.

文件：516.96 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：382.5 Kbytes 页数：4 Pages

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华瑞