BGSX22G6U10数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers very low insertion loss even at high frequencies of up to 7.125GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications.
The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V-3.6V.
BGSX22G6U10 features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1 mm x 1.5 mm and thickness of 0.60mm.

特性 Features

• High linearity up to 39dBm peak power
• Low current consumption, min supply voltage 1.6V
• Ultra low insertion loss and high port to port isolation up to 7.125GHz
• Fast switching speed for 5G-SRS applications
• GPIO control interface
• No decoupling capacitors required for typical applications
• RoHS and WEEE compliant package
• Ultra low profile lead-less plastic package (MSL-1, 260°C per IPC/JEDEC J-STD-20)
• Size: 1.1mm x 1.5mm

应用 Application

• RF path routing/swapping for cellular mobile devices
• GSM, WCDMA, 4G/LTE and 5G applications

简介

BGSX22G6U10属于RF/IF射频/中频RFID的射频开关。由制造生产的BGSX22G6U10射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。