BGSX22G5A10数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.

特性 Features

• RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
• Ultra-low insertion loss and harmonics generation
• 0.1 to 6.0 GHz coverage
• High port-to-port-isolation
• No decoupling capacitors required if no DC applied on RF lines
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.1mm x 1.5mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package

应用 Application

Multi-mode LTE and WCDMA multi antenna applications

简介

BGSX22G5A10属于RF/IF射频/中频RFID的射频开关。由制造生产的BGSX22G5A10射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。