BGSX22G5A10 E6327数据手册Infineon中文资料规格书

描述 Description

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.

特性 Features

·RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
·Ultra-low insertion loss and harmonics generation
·0.1 to 6.0 GHz coverage
·High port-to-port-isolation
·No decoupling capacitors required if no DC applied on RF lines
·General Purpose Input-Output (GPIO) Interface
·Small form factor 1.1mm x 1.5mm
·No power supply blocking required
·High EMI robustness
·RoHS and WEEE compliant package

应用 Application

Multi-mode LTE and WCDMA multi antenna applications