BGS13S4N9数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

Wideband RF SP3T Switch The BGS13S4N9 RF CMOS switch is specifically designed for cell phone and mobile applications. Any of the three ports can be used as termination of the diversity antenna handling up to 30 dBm. It offers outstanding ESD robustness of 1kV.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 V to VDD.
The BGS13S4N9 RF Switch is manufactured in Infineon’s patented CMOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS.

特性 Features

·3 high-linearity TRx paths with power handling capability of up to 30 dBm
·Low insertion loss @2.7GHz 0.55dB
·Low harmonic generation
·High port-to-port-isolation
·0.1 to 3.0 GHz coverage
·Small form factor 1.1mm x 1.1mm x 0.375mm
·On-chip control logic including ESD protection
·GPIO control interface
·No power supply blocking required
·High EMI robustness
·RoHS and WEEE compliant package
 

应用 Application

RF CMOS switch is specifically designed for Edge / CDMA2000 / LTE / WCDMA applications

简介

BGS13S4N9属于RF/IF射频/中频RFID的射频开关。由制造生产的BGS13S4N9射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。