BGS12SN6数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29 dB in the 2.5 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.
The BGS12SN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a maximum height of 0.375 mm.
Evaluation Board: BGS12SN6 BOARD

特性 Features

· High switching speed, ideal for WLAN and Bluetooth applications
· All ports fully bi-directional
· Low insertion loss
· Low harmonic generation
· High port-to-port-isolation
· 0.1 to 6 GHz coverage
· High ESD robustness
· On-chip control logic
· Very small leadless and halogen free package TSNP-6-2 (0.7x1.1mm 2) with super low height of 0.375 mm
· No decoupling capacitors required if no DC applied on RF lines
·RoHS compliant package
·2 high-linearity TRx paths with power handling capability of up to 30 dBm

简介

BGS12SN6属于RF/IF射频/中频RFID的射频开关。由制造生产的BGS12SN6射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。