BGS13S2N9数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The BGS13S2N9 RF CMOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 V to VDD . The BGS13S2N9 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a maximum height of 0.375 mm.

特性 Features

·3 high-linearity TRx paths with power handling capability of up to 30 dBm
·Low insertion loss
·Low harmonic generation
·High port-to-port-isolation
·Suitable for Edge / CDMA2000 / LTE / WCDMA applications
·0.1 to 3.0 GHz coverage
·No decoupling capacitors required if no DC applied on RF lines
·On-chip control logic including ESD protection
·General Purpose Input-Output (GPIO) Interface
·Small form factor 1.1mm x 1.1mm x 0.375mm
·No power supply blocking required
·High EMI robustness
·RoHS and WEEE compliant package

应用 Application

· Cell phone and mobile applications

简介

BGS13S2N9属于RF/IF射频/中频RFID的射频开关。由制造生产的BGS13S2N9射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。