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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BGY888	文件：55 Kbytes Page：12 Pages	CATVamplifiermodule DESCRIPTION Hybridhighdynamicrangeamplifiermoduleoperatingwithavoltagesupplyof24VinaSOT115Jpackage.Thehighgainmoduleconsistsoftwocascadedstagesbothincascodeconfiguration. FEATURES •Excellentlinearity •Extremelylownoise •Highgain •Excellentreturnlosspr	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BGY888	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888	文件：173.97 Kbytes Page：17 Pages	UHFpowerLDMOStransistor	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BLF888	文件：435.75 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A500WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorisoptimizedfordigitalapplicationsandcandeliver110WaverageDVB-TbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessof	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888A	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BLF888A	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888A	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888A(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888AS	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BLF888AS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888AS	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888B	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888B	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888B(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888BS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888BS	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888D	文件：1.07778 Mbytes Page：12 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888DS	文件：1.07778 Mbytes Page：12 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW	AmpleonAmpleon USA Inc. 安谱隆	Ampleon
BLF888E	文件：1.40887 Mbytes Page：13 Pages	UHFpowerLDMOStransistor Generaldescription A750WLDMOSRFpowertransistorforasymmetricalbroadcastDohertytransmitter applicationswhichoperatesat150WDVB-Taveragepower.Theexcellentruggednessof thisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Design	AmpleonAmpleon USA Inc. 安谱隆	Ampleon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	BGE888	KOREA	22+		6521	只做原装正品现货!或订货假一赔十!	询价
贸泽芯城（深圳）电子科技有限公司	BGE888	KOREA	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	BGE9010	DNKN	D/CCALL		14		询价
深圳市创新迹电子有限公司	BGE988	NULL	2023+	NULL	8700	原装现货	询价
深圳市科雨电子有限公司	BGF.0M.100.XAV	LEMO	20+	连接器	293	就找我吧!--邀您体验愉快问购元件!	询价
深圳市鹏顺微电子科技有限公司	BGF.0M.200.XAZ	雷莫	2022+	原厂原包装	6800	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市航润创能电子集团有限公司	BGF10	PHILIPS	21+	SOT23	1	原装现货假一赔十	询价
深圳市威雅利发展有限公司	BGF10	PHILIPS	06+	SOT23	1	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市汇莱威科技有限公司	BGF10	PHILIPS			589220	16余年资质绝对原盒原盘更多数量	询价
深圳市安富世纪电子有限公司	BGF10	PHILIPS	23+	SOT23	1	全新原装正品现货,支持订货	询价

更多BGE888供应商更新时间2024-9-23 18:43:00

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