RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

400 MHz至2750 MHz高线性度可变增益放大器

BGA7204 MMIC是一款线性度极好的可变增益放大器(VGA)，工作频率范围为0.4 GHz至2.75 GHz。在最小衰减时，其具有18.5 dB的增益、38 dBm的输出三阶截点(IP3O)和7 dB的噪声系数。衰减范围为31.5 dB ，衰减步长为0.5 dB。\n增益控制通过数字并行接口或数字串行接口(SPI)提供。数字串行接口可提供重新编程衰减曲线和片上温度监控等高级功能。接口可以进行组合，以支持快速衰减响应。串行接口可用于预先设置所需的增益电平，而并行接口则可用于以0.15 μs选择增益设置。\n其设计符合蜂窝基站苛刻的任务剖面，凭借出色的射频性能和接合灵活性而适合多种应用。\n 38 dBm的高输出三阶截点(IP3O)\n31.5 dB的衰减范围\n1 dB增益压缩点处21 dBm的输出功率\n最小衰减时7 dB的噪声系数\n5 V单电源\n数字并行和数字串行控制(SPI)\n可编程衰减曲线\n温度传感器\n所有针脚均提供ESD保护(HBM > 2 kV)\n潮湿敏感度等级1\n符合欧盟2002/95/EC危害性物质限制(RoHS)指令;

恩XP

CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9

DESCRIPTION: The IDT7203/7204/7205/7206/7207/7208 are dual-port memory buffers with internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability

文件：147.4 Kbytes 页数：14 Pages

IDT

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

文件：145.18 Kbytes 页数：9 Pages

IRF

ETHERNET DC/DC CONVERTERS

[Valor Electronics, Inc.]

文件：450.66 Kbytes 页数：4 Pages

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