NPN wideband silicon germanium RF transistor

General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features and benefits ■ Low noise high linearity RF transistor ■ High maximum output third-order intercept point 32 dBm at 1.8 GHz ■ 110 GHz

文件：131.06 Kbytes 页数：12 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN wideband silicon germanium RF transistor

文件：131.06 Kbytes 页数：12 Pages

PHI

PHI

NPN宽带硅锗RF晶体管

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 110 GHz fT silicon germanium technology\nHigh maximum output third-order intercept point 32 dBm at 1.8 GHz\nLow noise high linearity RF transistor;

恩XP

三极管

Nexperia

安世