General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features and benefits

■ Low noise high linearity RF transistor

■ High maximum output third-order intercept point 32 dBm at 1.8 GHz

■ 110 GHz fT silicon germanium technology

Applications

■ Ka band oscillators DRO’s

■ High linearity applications

■ Medium output power applications

■ Wi-Fi / WLAN / WiMAX

■ GPS

■ ZigBee

■ SDARS first stage LNA

■ LTE, cellular, UMTS

BFU760F属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。恩智浦半导体公司制造生产的BFU760F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。