丝印：WB*；Package：SOT363；Dual NPN wideband silicon RF transistor

文件：304.86 Kbytes 页数：20 Pages

恩XP

Dual NPN wideband silicon RF transistor

文件：304.86 Kbytes 页数：20 Pages

PHI

PHI

双NPN宽带硅RF晶体管

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pinSOT363 package.\nThe BFU520Y is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.65 dB at 900 MHz\nMaximum stable gain 19 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

12V,0.03A,General Purpose NPN Bipolar Transistor

Galaxy

银河微电