丝印：BFU；Package：SMC；1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 1500W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：108.74 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：BFU；Package：DO-214AB；5.0 To 440V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 1μA above 11V 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (

文件：4.24665 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：BFU；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Plastic Case Material has UL Flammability

文件：312.25 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：BFU；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：1.08724 Mbytes 页数：5 Pages

SUNMATE

森美特

丝印：BFU；Package：DO-214AB；Surface Mount Transient Voltage Suppressors

文件：312.25 Kbytes 页数：4 Pages

ANOVA

林朋科技

丝印：BFU*；Package：SOT-89；PNP Transistor

■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623

文件：650.66 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：TA；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits  Low noise

文件：309.76 Kbytes 页数：22 Pages

恩XP

丝印：tTB；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits ■ Low noise, hi

文件：310.33 Kbytes 页数：22 Pages

恩XP

丝印：A4；Package：SOT-343R；NPN SiGe wideband transistor

DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Very low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • 45 GHz SiGe process. APPLICATI

文件：102.72 Kbytes 页数：16 Pages

PHI

PHI

丝印：TC；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits • Low noise,

文件：289.7 Kbytes 页数：21 Pages

恩XP