晶体管

SLKOR

萨科微半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) ·Complement to Type BFU520 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.

文件：302.81 Kbytes 页数：3 Pages

ISC

无锡固电

NPN Wideband Silicon RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 1.8 dB TYP @VCE = 10 V, IC = 10 mA, f = 0.9 GHz ·High Power Gain MAG = 9 dB TYP. @VCE = 8 V, IC = 40 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Applications Requiring High Su

文件：255.16 Kbytes 页数：3 Pages

ISC

无锡固电

MINIATURE FUSEHOLDERS

文件：89.37 Kbytes 页数：1 Pages

Littelfuse

力特

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

文件：1.6009 Mbytes 页数：96 Pages

Intel

英特尔

횠6.1mm mounting Robust stainless steel housing

文件：423.92 Kbytes 页数：5 Pages

MARL